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LL101B

30mA Surface Mount Schottky Barrier Diode

Features ● For general purpose applications ● The LL101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. ● The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for f

文件:390.9 Kbytes 页数:2 Pages

SUNMATE

森美特

LL101B

SCHOTTKY BARRIER DIODES

FEATURES : • For general purpose applications • The LL101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for

文件:35.04 Kbytes 页数:2 Pages

EIC

LL101B

Surface Mount Si-Schottky Diodes

Surface Mount Si-Schottky Diodes • Nominal current 15 mA • Repetitive peak reverse voltage 40...50 V • Glass case MiniMELF SOD-80C • Weight approx. 0.04g • Standard packaging taped and reeled

文件:134.28 Kbytes 页数:1 Pages

DIOTEC

德欧泰克

LL101B

Small-Signal Diode Schottky Diodes

Features ♦ For general purpose applications ♦ The LL101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. ♦ The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for f

文件:122.65 Kbytes 页数:3 Pages

GOOD-ARK

固锝电子

LL101B

Silicon Schottky Barrier Diode for general purpose applications

SILICON SCHOTTKY BARRIER DIODES for general purpose applications The LL101 Series is a metal on silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupl

文件:170.38 Kbytes 页数:3 Pages

SEMTECH

先之科

LL101B

Schottky Barrier Rectifiers

VOLTAGE RANGE: 60 - 40 V POWER DIDDIPATION: 400 mW Features ◇ For general purpose applications ◇ The low forward voltage drop and fast switching marking it ideal for protection of MOS devices,steering, biasing and couping diodes for fast switching and low logic level applications. ◇ Integrate

文件:205.15 Kbytes 页数:3 Pages

LUGUANG

鲁光电子

LL101B

SMALL SINGAL SCHOTTKY DIODES

FEATURES • For general purpose applications • The LL101 series is a Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling dio

文件:313.84 Kbytes 页数:2 Pages

GXELECTRONICS

星合电子

LL101B

SMALL SIGNAL SCHOTTKY DIODES

FEATURES • For general purpose applications • The LL101 series is a Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and

文件:104.52 Kbytes 页数:2 Pages

JINANJINGHENG

晶恒集团

LL101B

SILICON SCHOTTKY BARRIER DIODES

SILICON SCHOTTKY BARRIER DIODES for general purpose applications The LL101 Series is a metal on silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupl

文件:171.83 Kbytes 页数:3 Pages

SEMTECH_ELEC

先之科半导体

LL101B

Schottky Diodes

FEATURES ◆ For general purpose applications. ◆ The LL101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fas

文件:107.01 Kbytes 页数:3 Pages

GE

技术参数

  • Polality:

    N-ch + P-ch

  • VDSS(V):

    20/-20

  • VGSS(V):

    +/-10

  • ID:

    Q1(A)

  • ID:

    Q2(A)

  • PD(W):

    0.5

  • Ciss:

    Q1(pF)Typ.

  • Ciss:

    Q2(pF)Typ.

  • Qg:

    Q1(nC)Typ.

  • Qg:

    Q2(nC)Typ.

  • RDS(ON):

    Q1(Ω)VGS=2.5VMax

  • RDS(ON):

    Q2(Ω)VGS=-2.5VMax

  • Number of pins:

    6

  • Surface mount package:

    Y

  • Package name(Toshiba):

    UF6

  • AEC-Q101:

    Qualified(*)

  • Generation:

    U-MOSⅢ/U-MOSⅢ

  • Width×Length×Height(mm):

    2.0 x 2.1 x 0.7

  • Package Size(mm2):

    4.20

  • Drive voltage type:

    Low Voltage Gate Drive

供应商型号品牌批号封装库存备注价格
TOSHIBA/东芝
2025+
UF6
5000
原装进口,免费送样品!
询价
TOSHIBA
16+
UF6
3000
进口原装现货/价格优势!
询价
TOSHIBA
24+
UF6
44590
原装现货假一罚十
询价
TOSHIBA
24+
SOT-363
9700
绝对原装正品现货假一罚十
询价
TOSHIBA/东芝
2019+PB
UF6
44590
原装正品 可含税交易
询价
TOSHIBA
13+
SOT363
756
只做原装正品
询价
TOSHIBA/东芝
2026+
UF6
12500
全新原装正品,本司专业配单,大单小单都配
询价
TOSHIBA/东芝
24+
SOT-363
9600
原装现货,优势供应,支持实单!
询价
TOSHIBA(东芝)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
TOSHIBA/东芝
23+
SOT-363
50000
全新原装正品现货,支持订货
询价
更多LL1供应商 更新时间2026-3-18 16:36:00