丝印：LGE3D15065A；Package：TO-220AC；Silicon Carbide Schottky Diode

Features  Zero Reverse Recovery Current  Zero Forward Recovery Voltage  Positive Temperature Coefficient on VF  Temperature-independent Switching  175°C Operating Junction Temperature Applications  Switch Mode Power Supplies  Power Factor Correction  Motor drive, PV Inverter, Wi

文件：1.30027 Mbytes 页数：4 Pages

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鲁光电子

丝印：LGE3D30065H；Package：TO-247-2；Silicon Carbide Schottky Diode

Features  Zero Reverse Recovery Current  Zero Forward Recovery Voltage  Positive Temperature Coefficient on VF  Temperature-independent Switching  175°C Operating Junction Temperature Applications  Switch Mode Power Supplies  Power Factor Correction  Motor drive, PV Inverter, Wi

文件：2.90078 Mbytes 页数：4 Pages

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鲁光电子

丝印：LGE3D30120D；Package：TO-247-3；Silicon Carbide Schottky Diode

Features  Zero Reverse Recovery Current  Zero Forward Recovery Voltage  Positive Temperature Coefficient on VF  Temperature-independent Switching  175°C Operating Junction Temperature  Lead Free Package and Finish Applications  Switch Mode Power Supplies  Power Factor Correction

文件：2.28506 Mbytes 页数：4 Pages

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鲁光电子

丝印：LGE3M14120Q；Package：TO-247-4；Silicon Carbide Power MOSFET

Features  High speed switching  Very low switching losses  High blocking voltage with low on-resistance  Temperature independent turn-off switching losses  Halogen free, RoHS compliant Applications  EV motor drive  PV string inverters  Solar power optimizer  Switch mode power

文件：9.49862 Mbytes 页数：11 Pages

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鲁光电子

丝印：LGE5D06065F；Package：PDFN3x3；Silicon Carbide Schottky Diode

Features  Zero Reverse Recovery Current  Zero Forward Recovery Voltage  Low power loss,high efficiency  High Frequency Operation  Extremely Fast Switching  Temperature-independent Switching  Positive Temperature Coefficient on VF  Operating Junction Temperature 175℃ Applications

文件：963.52 Kbytes 页数：5 Pages

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鲁光电子

丝印：LGE07TD60BK；Package：TO-252；600V, 7A, Trench FS II Fast IGBT

文件：888.17 Kbytes 页数：7 Pages

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鲁光电子

丝印：LGE3D02120F；Package：TO-252-2；Silicon Carbide Schottky Diode

文件：1.58901 Mbytes 页数：4 Pages

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鲁光电子

丝印：LGE3D04065A；Package：TO-220-2；Silicon Carbide Schottky Diode

文件：2.05367 Mbytes 页数：4 Pages

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鲁光电子

丝印：LGE3D05120A；Package：TO-220AC；Silicon CarbideSchottkyDiode

文件：1.79595 Mbytes 页数：4 Pages

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鲁光电子

丝印：LGE3D20065D；Package：TO-247-3；Silicon Carbide SchottkyDiode

文件：3.36241 Mbytes 页数：5 Pages

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鲁光电子