丝印：LGE3D02065F；Package：TO-252-2L；Silicon Carbide Schottky Diode

Features 650-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent SwitchingBehavior Extremely Fast Switching Positive Temperature Coefficient on VF Benefits Replace Bipolar with Unipolar Rectifiers Essentia

文件：1.85406 Mbytes 页数：5 Pages

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丝印：LGE3D02120A；Package：TO-220AC；Silicon Carbide Schottky Diode

Features  1.2kV Schottky Rectifier  Zero Reverse Recovery Current  High-Frequency Operation  Temperature-Independent Switching  Extremely Fast Switching Benefits  Replace Bipolar with Unipolar Rectifiers  Essentially No Switching Losses  High Efficiency  Reduction of Heat Sink R

文件：1.62555 Mbytes 页数：5 Pages

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丝印：LGE3D04065F；Package：TO-252-2L；Silicon Carbide Schottky Diode

Features 650-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent SwitchingBehavior Extremely Fast Switching Positive Temperature Coefficient on VF Applications Switch Mode Power Supplies (SMPS) Power Facto

文件：1.87626 Mbytes 页数：5 Pages

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丝印：LGE3D04065G；Package：PDFN5x6；Silicon Carbide Schottky Diode

Features  Zero Reverse Recovery Current  Zero Forward Recovery Voltage  Low power loss,high efficiency  High Frequency Operation  Extremely Fast Switching  Temperature-independent Switching  Positive Temperature Coefficient on VF  Operating Junction Temperature 175℃ Benefits  Re

文件：1.12606 Mbytes 页数：5 Pages

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丝印：LGE3D08065A；Package：TO-220AC；Silicon Carbide Schottky Diode

Features • Zero Forward/Reverse Recovery Current • High Blocking Voltage • High Frequency Operation • Positive Temperature Coefficient on VF • Temperature Independent Switching Behavior Benefits • Higher System Efficiency • Parallel Device Convenience without thermal runaway • Higher Temp

文件：1.30779 Mbytes 页数：4 Pages

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丝印：LGE3D08065F；Package：TO-252；Silicon Carbide Schottky Diode

Features 650-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF Benefits Replace Bipolar with Unipolar Rectifiers Essential

文件：1.60756 Mbytes 页数：5 Pages

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丝印：LGE3D10065AF；Package：ITO-220AC；Silicon Carbide Schottky Diode

Features • Zero Forward/Reverse Recovery Current • High Blocking Voltage • High Frequency Operation • Positive Temperature Coefficient on VF • Temperature Independent Switching Behavior • Fully isolated package, 4000Vpk

文件：1.38852 Mbytes 页数：4 Pages

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丝印：LGE3D10170H；Package：TO-247-2；Silicon Carbide Schottky Diode

Features  Zero Reverse Recovery Current  Zero Forward Recovery Voltage  Positive Temperature Coefficient on V VF  Temperature-independent Switching  175°C Operating Junction Temperature Benefits  Replace Bipolar with Unipolar Device  Reduction of Heat Sink Size  Parallel Devices W

文件：1.21475 Mbytes 页数：4 Pages

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丝印：LGE3D12120D；Package：TO-247-3L；Silicon Carbide Schottky Diode

Features  1200-Volt Schottky Rectifier  Zero Reverse Recovery Current  Zero Forward RecoveryVoltage  High-Frequency Operation  Temperature-Independent Switching Behavior  Extremely Fast Switching  Positive Temperature Coefficient on VF Benefits  Replace Bipolar with Unipolar Recti

文件：3.35662 Mbytes 页数：5 Pages

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丝印：LGE3D15065A；Package：TO-220AC；Silicon Carbide Schottky Diode

Features  Zero Reverse Recovery Current  Zero Forward Recovery Voltage  Positive Temperature Coefficient on VF  Temperature-independent Switching  175°C Operating Junction Temperature Applications  Switch Mode Power Supplies  Power Factor Correction  Motor drive, PV Inverter, Wi

文件：1.30027 Mbytes 页数：4 Pages

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