RF POWER TRANSISTORS Ldmos Enhanced Technology

DESCRIPTION The LET21030C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.1 GHz. The LET21030C is designed for high gain and broadband performance operating in common source

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STMICROELECTRONICS

意法半导体

RF POWER TRANSISTORS Ldmos Enhanced Technology

ST

意法半导体

Low Loss CWDM

文件：351.5 Kbytes 页数：2 Pages

OPLINK

Low Loss CWDM

文件：351.5 Kbytes 页数：2 Pages

OPLINK

Dial Type Knobs, Knurled Sides, Top Indictor Line, Solid Aluminum

文件：116.32 Kbytes 页数：1 Pages

MULTICOMP

易络盟