Dial Type Knobs, Knurled Sides, Top Indictor Line, Solid Aluminum

文件：116.32 Kbytes 页数：1 Pages

MULTICOMP

易络盟

RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cell

文件：377.52 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

2110-2170 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs

[CREE] This versatile UMTS module provides excellent linearity and efficiency in a low-cost surface mount package. The PFM21030 includes two stages of amplification, along with internal sense FETs that are on the same silicon die as the RF devices. These thermally coupled sense FETs simplify the

文件：423.27 Kbytes 页数：13 Pages

ETCList of Unclassifed Manufacturers

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2110-2170 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs

[CREE] This versatile UMTS module provides excellent linearity and efficiency in a low-cost surface mount package. The PFM21030 includes two stages of amplification, along with internal sense FETs that are on the same silicon die as the RF devices. These thermally coupled sense FETs simplify the

文件：423.27 Kbytes 页数：13 Pages

ETCList of Unclassifed Manufacturers

未分类制造商