LET20045C数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

The LET20045C is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.0 GHz. The LET20045C is designed for high gain and broadband performance operating in common source mode at 36 V. It is ideal for base station applications requiring high linearity.

特性 Features

Excellent thermal stability
Common source configuration
P
OUT (@ 28 V)= 54 W with 13.3 dB gain @ 2000 MHz
P
OUT (@ 36 V)= 65 W with 12.5 dB gain @ 2000 MHz
BeO free package
In compliance with the 2002/95/EC European directive

简介

LET20045C属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的LET20045C晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。