45W 28V 1.6GHz LDMOS TRANSISTOR

The LET16045C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.6 GHz. The LET16045C is designed for high gain and broadband performance operating in common source mode at 28 V. • Excellent thermal stability\n• Common source configuration\n• POUT (@28 V) = 45 W with 14.5 dB gain @ 1600 MHz• BeO free package\n• In compliance with the 2002/95/EC European directive;

ST

意法半导体

Excellent thermal stability

文件：451.12 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

Package：M243；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 80V 1.6GHZ M243

STMICROELECTRONICS

意法半导体

NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with emitter connected to flange. FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structur

文件：79.96 Kbytes 页数：12 Pages

PHI

飞利浦

17-30 WATTS SINGLE & MULTI OUTPUT DC/DC INDUSTRIAL

文件：560.7 Kbytes 页数：2 Pages

POWERBOX

2 X 160A SCHOTTKY BARRIER RECTIFIER

2 X 160A Schottky Barrier Rectifier ● 2500V isolation - Terminals to Base ● Low Forward Voltage Drop ● 2 Schottky Rectifiers in one pkg. ● 35-45V @ 160A/leg ● Low Switching losses

文件：135.72 Kbytes 页数：2 Pages

Microsemi

美高森美