丝印：LEs；Package：SOT-23；PNP Silicon RF Transistor (For VHF oscillator applications)

PNP Silicon RF Transistor ● For VHF oscillator applications

文件：39.04 Kbytes 页数：3 Pages

SIEMENS

西门子

丝印：LEs；Package：PG-SC-59；OptiMOS 2 Small-Signal-Transistor

Features • N-channel • Enhancement mode • Logic level (4.5V) • Avalanche rated • Footprint compatible to SOT23 • dv /dt rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101

文件：142.49 Kbytes 页数：3 Pages

TYSEMI

台湾TY半导体

丝印：LESB；Package：VSSOP；LP3982 Micropower, Ultra-Low-Dropout, Low-Noise, 300-mA CMOS Regulator

1 Features 1• 2.5-V to 6-V Input Range • MAX8860 Pin, Package, and Specification Compatible • 300-mA Output Current • 120-mV Typical Dropout at 300 mA • 90-μA Typical Quiescent Current • 1-nA Typical Shutdown Mode • 60-dB Typical PSRR • 120-μs Typical Turnon Time • Stable With Small Cera

文件：689.03 Kbytes 页数：29 Pages

TI

德州仪器

丝印：LESB；Package：VSSOP；LP3982 Micropower, Ultra-Low-Dropout, Low-Noise, 300-mA CMOS Regulator

1 Features 1• 2.5-V to 6-V Input Range • MAX8860 Pin, Package, and Specification Compatible • 300-mA Output Current • 120-mV Typical Dropout at 300 mA • 90-μA Typical Quiescent Current • 1-nA Typical Shutdown Mode • 60-dB Typical PSRR • 120-μs Typical Turnon Time • Stable With Small Cera

文件：689.03 Kbytes 页数：29 Pages

TI

德州仪器

丝印：LESB；Package：VSSOP；LP3982 Micropower, Ultra-Low-Dropout, Low-Noise, 300-mA CMOS Regulator

1 Features 1• 2.5-V to 6-V Input Range • MAX8860 Pin, Package, and Specification Compatible • 300-mA Output Current • 120-mV Typical Dropout at 300 mA • 90-μA Typical Quiescent Current • 1-nA Typical Shutdown Mode • 60-dB Typical PSRR • 120-μs Typical Turnon Time • Stable With Small Cera

文件：689.03 Kbytes 页数：29 Pages

TI

德州仪器

丝印：LESB；Package：VSSOP；LP3982 Micropower, Ultra-Low-Dropout, Low-Noise, 300-mA CMOS Regulator

1 Features 1• 2.5-V to 6-V Input Range • MAX8860 Pin, Package, and Specification Compatible • 300-mA Output Current • 120-mV Typical Dropout at 300 mA • 90-μA Typical Quiescent Current • 1-nA Typical Shutdown Mode • 60-dB Typical PSRR • 120-μs Typical Turnon Time • Stable With Small Cera

文件：689.03 Kbytes 页数：29 Pages

TI

德州仪器

丝印：C；Package：SOD-523；The LESD5D5.0CT1G is designed to protect voltage

General Description sensitive components from ESD and transient voltage events. Excellent clamping capability, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Features • Small Body Outline Dimensions • Low Body Heig

文件：405.24 Kbytes 页数：4 Pages

UMW

友台半导体

丝印：A5；Package：DFN0603；1- Line Bi-directional TVS Diode

Features Ultra low leakage: nA level Operating voltage: 5V Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±15kV Contact discharge: 8kV RoHS Compliant Low Clamping Voltage – IEC61000-4-4 (EFT) 40A (5/50ns) – IEC61000-4-5 (Lightning) 5A (8/20μs) A

文件：1.20225 Mbytes 页数：3 Pages

LEIDITECH

雷卯电子

丝印：ZZ；Package：DFN0603；1-Line Ultra Low Capacitance Bi-directional TVS Diode

Features Ultra small package: 0.6x0.3x0.3mm Ultra low capacitance: 0.25pF typical Ultra low leakage: nA level Low operating voltage: 5V Low clamping voltage 2-pin leadless package Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±20kV Contact discharg

文件：2.13845 Mbytes 页数：4 Pages

LEIDITECH

雷卯电子

丝印：3M；The LESD3Z5.0CMT1G is designed to protect voltage

General Description The LESD3Z5.0CMT1G is designed to protect voltage sensitive components from ESD and transient voltage events. Excellent clamping capability, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Appli

文件：463.07 Kbytes 页数：4 Pages

UMW

友台半导体