GaAs infrared emitting diode

文件：159.35 Kbytes 页数：11 Pages

OSRAM

艾迈斯欧司朗

SMALL OUTLINE OPTOISOLATORS DARLINGTON OUTPUT NO BASE CONNECTION

Small Outline Optoisolators Darlington Output (No Base Connection) These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector, in a surface mountable, small outline, plastic package. No base connection for improved noise

文件：111.05 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2500 Typ (NTE263) = 3500 T

文件：24.89 Kbytes 页数：2 Pages

NTE

Darlington Phototransistor

文件：50.6 Kbytes 页数：2 Pages

PANASONIC

松下