LCE01P30K数据手册库存现货雷卯电子-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
LCE01P30K	文件：994.89 Kbytes Page：6 Pages	丝印：NCE01P30K；Package：TO-252-2L；P-Channel Enhancement Mode Power MOSFET 文件：994.89 Kbytes 页数：6 Pages	LEIDITECH 雷卯电子	LEIDITECH
LCE01P30K	文件：300 bytes Page：1 Pages	MOSFET场效应管	Leiditech 雷卯电子	Leiditech
NCE01P30	文件：348.33 Kbytes Page：7 Pages	NCE P-Channel Enhancement Mode Power MOSFET 文件：348.33 Kbytes 页数：7 Pages	NCEPOWER 新洁能	NCEPOWER
NCE01P30D	文件：330.66 Kbytes Page：7 Pages	NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features ● VDS =-100V,ID =-30A RDS(ON) 文件：330.66 Kbytes 页数：7 Pages	NCEPOWER 新洁能	NCEPOWER
NCE01P30I	文件：321.87 Kbytes Page：7 Pages	NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features ● VDS =-100V,ID =-30A RDS(ON) 文件：321.87 Kbytes 页数：7 Pages	NCEPOWER 新洁能	NCEPOWER

更多LCE01P30K供应商更新时间2025-12-9 14:01:00