丝印：NCE01P13K；Package：TO-252-2L；LCE P-Channel Enhancement Mode Power MOSFET

文件：1.10489 Mbytes 页数：6 Pages

LEIDITECH

雷卯电子

MOSFET场效应管

Leiditech

雷卯电子

NCE P-Channel Enhancement Mode Power MOSFET

文件：348.57 Kbytes 页数：7 Pages

NCEPOWER

新洁能

NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE01P13I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features ● VDS =-100V,ID =-13A RDS(ON)

文件：307.98 Kbytes 页数：7 Pages

NCEPOWER

新洁能

NCE P-Channel Enhancement Mode Power MOSFET

文件：407.15 Kbytes 页数：7 Pages

NCEPOWER

新洁能