MV21003

GaAsVaractorDiodesAbruptJunction

Description Microsemi’sGaAsabruptjunctionvaractorsarefabricatedfromepitaxiallayersgrownatMicrosemiusingChemicalVaporDeposition.ThelayersareprocessedusingproprietarytechniquesresultinginahighQfactorandveryrepeatabletuningcurves.Thediodesareavailableinavarie

SKYA21003

0.1to6.0GHzSPDTSwitch

SLIM-MOX21003

Currentpulselimiters

VI-21003-CW

50-200WPCBMOUNTINGCOMPONENETS

Features •Inputs:10to400VDC •Output,1to95VDC •UL,CSA,TÜV,VDE,BABT,CF •80–90efficiency(typical) •ZCSpowerarchitecture •LownoiseFMcontrol •Boosterversionsavailableforexpandedpower

VI-21003-CX

50-200WPCBMOUNTINGCOMPONENETS

Features •Inputs:10to400VDC •Output,1to95VDC •UL,CSA,TÜV,VDE,BABT,CF •80–90efficiency(typical) •ZCSpowerarchitecture •LownoiseFMcontrol •Boosterversionsavailableforexpandedpower

VI-21003-EW

50-200WPCBMOUNTINGCOMPONENETS

Features •Inputs:10to400VDC •Output,1to95VDC •UL,CSA,TÜV,VDE,BABT,CF •80–90efficiency(typical) •ZCSpowerarchitecture •LownoiseFMcontrol •Boosterversionsavailableforexpandedpower

VI-21003-EX

50-200WPCBMOUNTINGCOMPONENETS

Features •Inputs:10to400VDC •Output,1to95VDC •UL,CSA,TÜV,VDE,BABT,CF •80–90efficiency(typical) •ZCSpowerarchitecture •LownoiseFMcontrol •Boosterversionsavailableforexpandedpower

VI-21003-IW

50-200WPCBMOUNTINGCOMPONENETS

Features •Inputs:10to400VDC •Output,1to95VDC •UL,CSA,TÜV,VDE,BABT,CF •80–90efficiency(typical) •ZCSpowerarchitecture •LownoiseFMcontrol •Boosterversionsavailableforexpandedpower

VI-21003-IX

50-200WPCBMOUNTINGCOMPONENETS

Features •Inputs:10to400VDC •Output,1to95VDC •UL,CSA,TÜV,VDE,BABT,CF •80–90efficiency(typical) •ZCSpowerarchitecture •LownoiseFMcontrol •Boosterversionsavailableforexpandedpower