AOD4185

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOD4185/AOI4185usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.WiththeexcellentthermalresistanceoftheDPAK/IPAKpackage,thisdeviceiswellsuitedforhighcurrentapplications. -RoHSCompliant -HalogenFree* Features

AOD4185

P-ChannelEnhancementModeMOSFET

Features Vos=-40VID=-40A RDS(ON)

AOD4185

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=-40A@TC=25℃ ·DrainSourceVoltage- :VDSS=-40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=15mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

AOD4185

P-ChannelMOSFET

Features ●VDS(V)=-40V ●ID=-40A ●RDS(ON)

AOD4185

P-ChannelMOSFET

Features ●VDS(V)=-40V ●ID=-40A ●RDS(ON)

AOI4185

iscP-ChannelMOSFETTransistor

AOI4185

P-Channel40V(D-S)MOSFET

AOI4185

P-ChannelMOSFETusesadvancedtrenchtechnology

AOI4185

P-ChannelEnhancementModeFieldEffectTransistor

AOTF4185

PlasticEncapsulatedDevice