High voltage high and low-side 2 A gate driver

Features  Transient withstand voltage 600 V  dV/dt immunity ± 50 V/ns in full temperature range  Driver current capability: – 2 A source typ. at 25 °C – 2.5 A sink typ. at 25 °C  Short propagation delay: 85 ns  Switching times 25 ns rise/fall with 1 nF load  Integrated bootstrap dio

文件：451.51 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

High voltage high and low-side 2 A gate driver

Features  Transient withstand voltage 600 V  dV/dt immunity ± 50 V/ns in full temperature range  Driver current capability: – 2 A source typ. at 25 °C – 2.5 A sink typ. at 25 °C  Short propagation delay: 85 ns  Switching times 25 ns rise/fall with 1 nF load  Integrated bootstrap dio

文件：451.51 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

Package：14-SOIC（0.154"，3.90mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HALF-BRIDGE 14SO

STMICROELECTRONICS

意法半导体

Package：14-SOIC（0.154"，3.90mm 宽）；包装：管件 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HALF-BRIDGE 14SO

STMICROELECTRONICS

意法半导体

Package：14-SOIC（0.154"，3.90mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HALF-BRIDGE 14SO

STMICROELECTRONICS

意法半导体