L6494数据手册集成电路（IC）的栅极驱动器规格书PDF

描述 Description

The L6494 is a high-voltage device manufactured with the BCD6 “offline” technology. It is a single chip half-bridge gate driver for N-channel power MOSFETs or IGBTs.

The high-side (floating) section is designed to stand a DC voltage rail up to 500 V, with 600 V transient withstand voltage. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing control units such as microcontrollers or DSP.

The device is a single input gate driver with programmable deadtime, and also features an active-low shutdown pin.

Both device outputs can sink 2.5 A and source 2 A, making the L6494 particularly suited for medium and high capacity power MOSFETs\\IGBTs.

The independent UVLO protection circuits present on both the lower and upper driving sections prevent the power switches from being operated in low efficiency or dangerous conditions.

The integrated bootstrap diode as well as all of the integrated features of this driver make the application PCB design simpler and more compact, and help reducing the overall bill of material.

特性 Features

• Transient withstand voltage 600 V
• dV/dt immunity ± 50 V/ns in full temperature range
• Driver current capability:
•2 A source typ. at 25 °C
•2.5 A sink typ. at 25 °C
• Short propagation delay: 85 ns
• Switching times 25 ns rise/fall with 1 nF load
• Integrated bootstrap diode
• Single input and shutdown pin
• Adjustable deadtime
• 3.3 V, 5 V TTL/CMOS inputs with hysteresis
• UVLO on both high-side and low-side sections
• Compact and simplified layout
• Bill of material reduction
• Flexible, easy and fast design

简介

L6494属于集成电路（IC）的栅极驱动器。由制造生产的L6494栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。