L6399中文资料高压高侧和低侧驱动器数据手册ST规格书

描述 Description

The L6399 is a high voltage device manufactured using BCD™ “offline” technology. It is a single- chip half bridge gate driver for N-channel power MOSFETs or IGBTs.

The high-side (floating) section is designed to withstand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy microcontroller/DSP interfacing.

特性 Features

• High voltage rail up to 600 V
• dV/dt immunity ± 50 V/ns over full temperature range
• Driver current capability:
•290 mA source
•430 mA sink
• Switching times 75/35 ns rise/fall with 1 nF load
• 3.3 V, 5 V TTL/CMOS inputs with hysteresis
• Integrated bootstrap diode
• Internal 320 ns deadtime
• Interlocking function
• Compact and simplified layout
• Bill of material reduction
• Flexible, easy and fast design

简介

L6399属于集成电路（IC）的栅极驱动器。由制造生产的L6399栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。