L6491数据手册集成电路（IC）的栅极驱动器规格书PDF

描述 Description

The L6491 is a high voltage device manufactured with the BCD6 “OFF-LINE” technology. It is a single-chip half-bridge gate driver for N-channel power MOSFET or IGBT.

The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing microcontroller/DSP.

An integrated comparator is available for fast protection against over-current, over-temperature, etc.

特性 Features

• High voltage rail up to 600 V
• dV/dt immunity ± 50 V/ns in full temperature range
• Driver current capability: 4 A source/sink
• Switching times 15 ns rise/fall with 1 nF load
• 3.3 V, 5 V TTL/CMOS inputs with hysteresis
• Integrated bootstrap diode
• Comparator for fault protections
• Smart shutdown function
• Adjustable deadtime
• Interlocking function
• Compact and simplified layout
• Bill of material reduction
• Effective fault protection
• Flexible, easy and fast design

简介

L6491属于集成电路（IC）的栅极驱动器。由制造生产的L6491栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。