丝印：L21；Package：SOT-23；Silicon Epitaxial Planar Switching Diodes

Silicon Epitaxial Planar Switching Diodes BAS29 Marking Code: L20 BAS31 Marking Code: L21 BAS35 Marking Code: L22 SOT-23 Plastic Package

文件：412.9 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：L21；Package：SOT23；General purpose controlled avalanche (double) diodes

FEATURES •Small plastic SMD package •Switching speed: max. 50 ns •General application •Continuous reverse voltage: max. 90 V •Repetitive peak reverse voltage: max. 110 V •Repetitive peak forward current: max. 600 mA •Repetitive peak reverse current: max. 600 mA.

文件：331.61 Kbytes 页数：10 Pages

NEXPERIA

安世

丝印：L21；Package：SOT-23；Silicon Epitaxial Planar Switching Diodes

文件：393.55 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

丝印：L21；Package：SOT-233L；Small Signal Diode

文件：482.78 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：L21；Package：SOT-233L；Small Signal Diode

文件：482.78 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：L2101D；Package：SOIC；LM2101 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 8-V UVLO

1 Features • Drives two N-channel MOSFETs in half-bridge configuration • 8-V typical undervoltage lockout on GVDD • 107-V absolute maximum voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink currents • 115-ns typical propagatio

文件：2.26484 Mbytes 页数：33 Pages

TI

德州仪器

丝印：L2103D；Package：SOIC；LM2103 107-V, 0.5-A/0.8-A Half-Bridge Driver with 8-V UVLO, Dead Time, and Inverting Input

1 Features • Drives two N-channel MOSFETs in half-bridge configuration • 8-V typical undervoltage lockout on GVDD • 107-V absolute maximum voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink currents • 475-ns typical fixed inte

文件：1.15722 Mbytes 页数：29 Pages

TI

德州仪器

丝印：L2103D；Package：SOIC；LM2103 107-V, 0.5-A/0.8-A Half-Bridge Driver with 8-V UVLO, Dead Time, and Inverting Input

1 Features • Drives two N-channel MOSFETs in half-bridge configuration • 8-V typical undervoltage lockout on GVDD • 107-V absolute maximum voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink currents • 475-ns typical fixed inte

文件：1.18959 Mbytes 页数：29 Pages

TI

德州仪器

丝印：L2103D；Package：SOIC；LM2103 107-V, 0.5-A/0.8-A Half-Bridge Driver with 8-V UVLO, Dead Time, and Inverting Input

1 Features • Drives two N-channel MOSFETs in half-bridge configuration • 8-V typical undervoltage lockout on GVDD • 107-V absolute maximum voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink currents • 475-ns typical fixed inte

文件：1.15722 Mbytes 页数：29 Pages

TI

德州仪器

丝印：L2104D；Package：SOIC；LM2104 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 8-V UVLO, Dead Time, and Shutdown Pin

1 Features • Drives two N-channel MOSFETs in half-bridge configuration • 8-V typical undervoltage lockout on GVDD • 107-V absolute maximum voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink currents • 475-ns typical fixed inte

文件：1.10613 Mbytes 页数：28 Pages

TI

德州仪器