丝印：L14；DIGITAL TRANSISTOR

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design e

文件：704.49 Kbytes 页数：9 Pages

ROHM

罗姆

丝印：L14；Package：SMT3；Digital transistors (built-in resistor)

Features 1) The built-in bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely eliminated. 2) Only the on/off conditions need to be set for operation, making device desigh easy. 3) Higher mountin

文件：61.34 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：L14；Package：WSON；LP5900 150-mA Ultra-Low-Noise LDO for RF and Analog Circuits - Requires No Bypass Capacitor

1 Features 1• Input Voltage Range, 2.5 V to 5.5 V • Output Voltage Range, 1.5 V to 4.5 V • Stable with 0.47-μF Ceramic Input and Output Capacitors • No Noise Bypass Capacitor Required • Logic Controlled Enable • Thermal-Overload and Short-Circuit Protection • −40°C to 125°C Junction Temper

文件：1.16929 Mbytes 页数：29 Pages

TI

德州仪器

丝印：L14；Package：WSON；LP5900 150-mA Ultra-Low-Noise LDO for RF and Analog Circuits - Requires No Bypass Capacitor

1 Features 1• Input Voltage Range, 2.5 V to 5.5 V • Output Voltage Range, 1.5 V to 4.5 V • Stable with 0.47-μF Ceramic Input and Output Capacitors • No Noise Bypass Capacitor Required • Logic Controlled Enable • Thermal-Overload and Short-Circuit Protection • −40°C to 125°C Junction Temper

文件：1.16929 Mbytes 页数：29 Pages

TI

德州仪器

丝印：L14；Package：WSON；LP5900 150-mA Ultra-Low-Noise LDO for RF and Analog Circuits - Requires No Bypass Capacitor

1 Features 1• Input Voltage Range, 2.5 V to 5.5 V • Output Voltage Range, 1.5 V to 4.5 V • Stable with 0.47-μF Ceramic Input and Output Capacitors • No Noise Bypass Capacitor Required • Logic Controlled Enable • Thermal-Overload and Short-Circuit Protection • −40°C to 125°C Junction Temper

文件：1.16929 Mbytes 页数：29 Pages

TI

德州仪器

丝印：L14；Package：WSON；LP5900 150-mA Ultra-Low-Noise LDO for RF and Analog Circuits - Requires No Bypass Capacitor

1 Features 1• Input Voltage Range, 2.5 V to 5.5 V • Output Voltage Range, 1.5 V to 4.5 V • Stable with 0.47-μF Ceramic Input and Output Capacitors • No Noise Bypass Capacitor Required • Logic Controlled Enable • Thermal-Overload and Short-Circuit Protection • −40°C to 125°C Junction Temper

文件：1.16929 Mbytes 页数：29 Pages

TI

德州仪器

丝印：L14；Package：SOT-23；-500mA/-50V Digital transistor (with built-in resistor)

文件：1.05531 Mbytes 页数：8 Pages

ROHM

罗姆

丝印：L14；Package：SMT3；−500mA / −50V Digital transistors (with built-in resistors)

文件：84.12 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：L14；Package：SOD-123F；Schottky Barrier Rectifiers

文件：462.32 Kbytes 页数：4 Pages

BILIN

银河微电

丝印：L1420901VXC；Package：CFP；SN55HVD233-SP 3.3-V Radiation Hardened CAN Transceiver

1 Features 1• QMLV (QML Class V) Radiation Hardness Assured (RHA) MIL-PRF 38535 Qualified, SMD 5962L1420901VXC – Single Event Latch-up (SEL) Immune to 86 MeV-cm2/mg at 125°C – Total Ionizing Dose (TID) immune up 50 kRad (Si) at Low Dose Rate – Qualified over the Military Temperature Range

文件：662.39 Kbytes 页数：34 Pages

TI

德州仪器