Canalis KT Standard straight transport lengths

Straight transport length, Canalis KTC, copper, 1600A, 3L+N+PER (Cu), high Icw, fixed length 2m, RAL9001

文件：241.86 Kbytes 页数：3 Pages

SCHNEIDER

施耐德

Canalis KT Standard straight transport lengths

Straight transport length, Canalis KTC, copper, 1600A, 3L+N+PER (Cu), high Icw, made to measure length 1.5-2m, RAL9001

文件：241.78 Kbytes 页数：3 Pages

SCHNEIDER

施耐德

Canalis KT Standard straight transport lengths

Straight transport length, Canalis KTC, copper, 1600A, 3L+N+PER (Cu), high Icw, made to measure length 2-2.5m, RAL9001

文件：241.78 Kbytes 页数：3 Pages

SCHNEIDER

施耐德

Canalis KT Standard straight transport lengths

Straight transport length, Canalis KTC, copper, 1600A, 3L+N+PER (Cu), high Icw, made to measure length 2.5-3m, RAL9001

文件：241.94 Kbytes 页数：3 Pages

SCHNEIDER

施耐德

Canalis KT Standard straight transport lengths

Straight transport length, Canalis KTC, copper, 1600A, 3L+N+PER (Cu), high Icw, fixed length 4m, RAL9001

文件：233.16 Kbytes 页数：3 Pages

SCHNEIDER

施耐德

EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING)

HIGH CURRENT SWITCHING APPLICATION. FEATURES • Low Collector Emitter Saturation Voltage. : VCE(sat)=0.4V(Max.) (IC=4A) • High Current and High fT : IC=8A, fT=180MHz. • Excellent Linearity of hFE • High Speed Switching Time. : fT=20nS (Typ.) • Complementary to KTA1204D/L APPLICAT

文件：407.74 Kbytes 页数：4 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 0.4V(Max) @IC= 4A APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

文件：282.63 Kbytes 页数：2 Pages

ISC

无锡固电

EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING)

HIGH CURRENT SWITCHING APPLICATION. FEATURES • Low Collector Emitter Saturation Voltage. : VCE(sat)=0.4V(Max.) (IC=4A) • High Current and High fT : IC=8A, fT=180MHz. • Excellent Linearity of hFE • High Speed Switching Time. : fT=20nS (Typ.) • Complementary to KTA1204D/L APPLICAT

文件：407.74 Kbytes 页数：4 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING)

HIGH CURRENT SWITCHING APPLICATION. FEATURES • Low Collector Emitter Saturation Voltage. : VCE(sat)=0.4V(Max.) (IC=4A) • High Current and High fT : IC=8A, fT=180MHz. • Excellent Linearity of hFE • High Speed Switching Time. : fT=20nS (Typ.) • Complementary to KTA1204D/L APPLICAT

文件：407.74 Kbytes 页数：4 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 0.4V(Max) @IC= 4A APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

文件：301.69 Kbytes 页数：2 Pages

ISC

无锡固电