500V N-CHANNEL MOSFET

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KERSEMI

TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM

TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components withhigher power and lower RDS(on)capabilities. This high voltage MOSFETuses an advanced termination scheme

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MOTOROLA

摩托罗拉

TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand hi

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MOTOROLA

摩托罗拉

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The PHX2N50E is supplied

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PHI

PHI