Schotty Barrier Diode

FEATURES · Low Forward Voltage Drop · Super High Speed Switching · High Reliability by Planer Design APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter

文件：264.9 Kbytes 页数：2 Pages

ISC

无锡固电

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES • VDSS=600V, I

文件：393.33 Kbytes 页数：6 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES • VDSS=600V, I

文件：390.11 Kbytes 页数：6 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

isc N-Channel MOSFET Transistor

• DESCRITION • Suitable for active power factor correction and switching mode Power supplies • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.58Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perfor

文件：394.89 Kbytes 页数：2 Pages

ISC

无锡固电

Phase control thyristor

文件：3.09971 Mbytes 页数：4 Pages

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鲁光电子

SCHOTTKY BARRIER DIODE

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ETCList of Unclassifed Manufacturers

未分类制造商

SCHOTTKY BARRIER DIODE

文件：73.34 Kbytes 页数：3 Pages

FUJI

富士通

Phase control thyristor

文件：3.09971 Mbytes 页数：4 Pages

LUGUANG

鲁光电子

TSS KP Series

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SHINDENGEN

Switching

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KEXIN

科信电子