N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES • VDSS=600V, I

文件：393.33 Kbytes 页数：6 Pages

KEC

KEC(Korea Electronics)

N CHANNEL MOS FIELD EFFECT TRANSISTOR

KEC

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES • VDSS=600V, I

文件：390.11 Kbytes 页数：6 Pages

KEC

KEC(Korea Electronics)

isc N-Channel MOSFET Transistor

• DESCRITION • Suitable for active power factor correction and switching mode Power supplies • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.58Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perfor

文件：394.89 Kbytes 页数：2 Pages

ISC

无锡固电

This Super Junction MOSFET has better characteristics

文件：388.81 Kbytes 页数：6 Pages

KEC

KEC(Korea Electronics)