Package：0805（2012 公制），3 PC 板；包装：剪切带（CT）带盒（TB） 类别：滤波器 EMI/RFI 滤波器（LC，RC 网络） 描述：FILTER LC 235PF 25MHZ SMD

KSS

京瓷

NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. FEATURES • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR • Self-aligned process entirel

文件：51.8 Kbytes 页数：8 Pages

PHI

PHI

Complementary intermediate level FET

1.1 General description Intermediate level N-channel and P-channel complementary pair enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applic

文件：826.38 Kbytes 页数：16 Pages

NEXPERIA

安世

N- and P-Channel 30 V (D-S) MOSFET

文件：1.23118 Mbytes 页数：14 Pages

VBSEMI

微碧半导体