NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. FEATURES • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR • Self-aligned process entirel

文件：51.8 Kbytes 页数：8 Pages

PHI

飞利浦

NPN microwave power transistor

恩XP

Complementary intermediate level FET

1.1 General description Intermediate level N-channel and P-channel complementary pair enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applic

文件：826.38 Kbytes 页数：16 Pages

NEXPERIA

安世

N- and P-Channel 30 V (D-S) MOSFET

文件：1.23118 Mbytes 页数：14 Pages

VBSEMI

微碧半导体

Complementary enhancement mode MOS transistors

DESCRIPTION One N-channel and one P-channel enhancement mode MOS transistor in an 8-pin plastic SOT96-1 (SO8) package. FEATURES • High-speed switching • No secondary breakdown • Very low on-resistance. APPLICATIONS • Motor and actuator driver • Power management • Synchronized rectificatio

文件：161.77 Kbytes 页数：16 Pages

PHI

飞利浦