TO-220AB PACKAGE

General Description It s mainly suitable for low viltage applications such as automotive, DC/DC converters and a load switch in battery powered applications FEATURES VDSS= 60V, ID= 50A Drain-Source ON Resistance : RDS(ON)=18m (Max.) @VGS= 10V

文件：422.87 Kbytes 页数：1 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description\nIt s mainly suitable for low viltage applications such as automotive, DC/DC converters and a load switch in battery powered applications\nFEATURES\nVDSS= 60V, ID= 50A\nDrain-Source ON Resistance :\nRDS(ON)=18m (Max.) @VGS= 10V VDSS= 60V, ID= 50A\nDrain-Source ON Resistance :\nRDS(ON)=18m (Max.) @VGS= 10V;

KEC

开益禧

E Series Power MOSFET

FEATURES • 4th generation E series technology • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 AP

文件：193.95 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

E Series Power MOSFET

FEATURES • 4th generation E series technology • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 AP

文件：151.17 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司