N and P-Ch Trench MOSFET

General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for Back-light Inverter. FEATURES • N-Channel : VDSS=30V, ID=7A. : RDS(ON)=23.5mΩ (Max.) @ VGS=10V : RDS(ON)=39mΩ (Max.) @ VGS=4.5V • P-Channel : VDSS=-30V, ID=-5A. : RDS(ON)=4

文件：497.13 Kbytes 页数：9 Pages

KEC

KEC(Korea Electronics)

N- and P-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Motor Drive • Mobile Power Bank

文件：1.23287 Mbytes 页数：14 Pages

VBSEMI

微碧半导体

N and P-Ch Trench MOSFET

文件：1.32193 Mbytes 页数：9 Pages

KEC

KEC(Korea Electronics)

N and P-Ch Trench MOSFET

文件：1.32193 Mbytes 页数：9 Pages

KEC

KEC(Korea Electronics)

N and P-Ch Trench MOSFET

文件：400.23 Kbytes 页数：9 Pages

KEC

KEC(Korea Electronics)

N and P-Ch Trench MOSFET

General Description\nSwitching regulator and DC-DC Converter applications.\nIt s mainly suitable for Back-light Inverter.FEATURES\n· N-Channel\n   : VDSS=30V, ID=7A.\n   : RDS(ON)=23.5mΩ (Max.) @ VGS=10V\n   : RDS(ON)=39mΩ (Max.) @ VGS=4.5V\n· P-Channel\n   : VDSS=-30V, ID=-5A.\n   : RDS(ON)=45.5mΩ · N-Channel\n   : VDSS=30V, ID=7A.\n   : RDS(ON)=23.5mΩ (Max.) @ VGS=10V\n   : RDS(ON)=39mΩ (Max.) @ VGS=4.5V\n· P-Channel\n   : VDSS=-30V, ID=-5A.\n   : RDS(ON)=45.5mΩ (Max.) @ VGS=-10V\n   : RDS(ON)=80mΩ (Max.) @ VGS=-4.5V\n· Super High Dense Cell Design.\n· Reliable and rugged. ;

KEC