首页 >KAI-0340-CBA-CB-AE-DUAL>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Common-DrainDualN-ChannelTrenchMOSFET12V,13.6A,2.5m(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
TentativeProductSpecification | AZDISPLAYS AZ Displays | AZDISPLAYS | ||
TentativeProductSpecification | AZDISPLAYS AZ Displays | AZDISPLAYS | ||
MOSFETPowerAmplifierModule Features •Smallpackage:30×10×5.9mm •Highefficiency:43Typat9.6V 40Typat4.8V •Lowpowercontrolcurrent:150µATyp | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
SURFACEMOUNTSCHOTTKYBARRIERDIODE Features •LowForwardVoltageDrop •FastSwitching •Ultra-SmallSurfaceMountPackage •PNJunctionGuardRingforTransientandESDProtection •LeadFree/RoHSCompliant(Note3) •GreenDevice(Note4and5) | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
SURFACEMOUNTSCHOTTKYBARRIERDIODE Features •LowForwardVoltageDrop •FastSwitching •Ultra-SmallSurfaceMountPackage •PNJunctionGuardRingforTransientandESDProtection •LeadFree/RoHSCompliant(Note3) •GreenDevice(Note4and5) | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
SURFACEMOUNTSCHOTTKYBARRIERDIODE | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
SURFACEMOUNTSCHOTTKYBARRIERDIODE Features •LowForwardVoltageDrop •FastSwitching •Ultra-SmallSurfaceMountPackage •PNJunctionGuardRingforTransientandESDProtection •LeadFree/RoHSCompliant(Note3) •GreenDevice(Note4and5) | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
SURFACEMOUNTSCHOTTKYBARRIERDIODE Features •LowForwardVoltageDrop •FastSwitching •Ultra-SmallSurfaceMountPackage •PNJunctionGuardRingforTransientandESDProtection •LeadFree/RoHSCompliant(Note3) •GreenDevice(Note4and5) | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
SURFACEMOUNTSCHOTTKYBARRIERDIODE | DIODESDiodes Incorporated 美台半导体 | DIODES |
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