256M x 8 Bit NAND Flash Memory

GENERAL DESCRIPTION Offered in 256Mx8bit, the K9F2G08X0B is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase ope

文件：826.54 Kbytes 页数：41 Pages

Samsung

三星

256M x 8 Bit NAND Flash Memory

GENERAL DESCRIPTION Offered in 256Mx8bit, the K9F2G08X0B is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase ope

文件：826.54 Kbytes 页数：41 Pages

Samsung

三星

256M x 8 Bit NAND Flash Memory

GENERAL DESCRIPTION\nOffered in 256Mx8bit, the K9F2G08X0B is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase opera • Voltage Supply\n   - 2.7V device(K9F2G08B0B): 2.50V ~ 2.90V\n   - 3.3V device(K9F2G08U0B): 2.70V ~ 3.60V\n• Organization\n   - Memory Cell Array : (256M + 8M) x 8bit\n   - Data Register : (2K + 64) x 8bit\n• Automatic Program and Erase\n   - Page Program : (2K + 64)Byte\n   - Block Erase : (128K +;

Samsung

三星

TSOP48

Samsung

三星

上传：深圳市壹芯创科技有限公司

TSOP48

SAMSUNG/三星

上传：深圳市纳艾斯科技有限公司