K9F2G08B0B-P中文资料三星数据手册PDF规格书

GENERAL DESCRIPTION

Offered in 256Mx8bit, the K9F2G08X0B is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F2G08X0B′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F2G08X0B is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

FEATURES

• Voltage Supply

- 2.7V device(K9F2G08B0B): 2.50V ~ 2.90V

- 3.3V device(K9F2G08U0B): 2.70V ~ 3.60V

• Organization

- Memory Cell Array : (256M + 8M) x 8bit

- Data Register : (2K + 64) x 8bit

• Automatic Program and Erase

- Page Program : (2K + 64)Byte

- Block Erase : (128K + 4K)Byte

• Page Read Operation

- Page Size : (2K + 64)Byte

- Random Read : 25µs(Max.)

- Serial Access : 25ns(Min.)

• Fast Write Cycle Time

- Page Program time : 200µs(Typ.)

- Block Erase Time : 1.5ms(Typ.)

• Command/Address/Data Multiplexed I/O Port

• Hardware Data Protection

- Program/Erase Lockout During Power Transitions

• Reliable CMOS Floating-Gate Technology

-Endurance : 100K Program/Erase Cycles(with 1bit/512Byte

ECC)

- Data Retention : 10 Years

• Command Driven Operation

• Unique ID for Copyright Protection

• Package :

- K9F2G08X0B-PCB0/PIB0 : Pb-FREE PACKAGE

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)