K9F2G08B0B中文资料256M x 8 Bit NAND Flash Memory数据手册Samsung规格书

描述 Description

GENERAL DESCRIPTION
Offered in 256Mx8bit, the K9F2G08X0B is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F2G08X0B′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F2G08X0B is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.FEATURES
• Voltage Supply
   - 2.7V device(K9F2G08B0B): 2.50V ~ 2.90V
   - 3.3V device(K9F2G08U0B): 2.70V ~ 3.60V
• Organization
   - Memory Cell Array : (256M + 8M) x 8bit
   - Data Register : (2K + 64) x 8bit
• Automatic Program and Erase
   - Page Program : (2K + 64)Byte
   - Block Erase : (128K + 4K)Byte
• Page Read Operation
   - Page Size : (2K + 64)Byte
   - Random Read : 25µs(Max.)
   - Serial Access : 25ns(Min.)
• Fast Write Cycle Time
   - Page Program time : 200µs(Typ.)
   - Block Erase Time : 1.5ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
   - Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
   -Endurance : 100K Program/Erase Cycles(with 1bit/512Byte
      ECC)
   - Data Retention : 10 Years
• Command Driven Operation
• Unique ID for Copyright Protection
• Package :
   - K9F2G08X0B-PCB0/PIB0 : Pb-FREE PACKAGE
      48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

特性 Features

• Voltage Supply
   - 2.7V device(K9F2G08B0B): 2.50V ~ 2.90V
   - 3.3V device(K9F2G08U0B): 2.70V ~ 3.60V
• Organization
   - Memory Cell Array : (256M + 8M) x 8bit
   - Data Register : (2K + 64) x 8bit
• Automatic Program and Erase
   - Page Program : (2K + 64)Byte
   - Block Erase : (128K + 4K)Byte
• Page Read Operation
   - Page Size : (2K + 64)Byte
   - Random Read : 25µs(Max.)
   - Serial Access : 25ns(Min.)
• Fast Write Cycle Time
   - Page Program time : 200µs(Typ.)
   - Block Erase Time : 1.5ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
   - Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
   -Endurance : 100K Program/Erase Cycles(with 1bit/512Byte
      ECC)
   - Data Retention : 10 Years
• Command Driven Operation
• Unique ID for Copyright Protection
• Package :
   - K9F2G08X0B-PCB0/PIB0 : Pb-FREE PACKAGE
      48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)