K7I161882B数据手册原装现货三星SAMSUNG-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
K7I161882B	文件：416.56 Kbytes Page：18 Pages	512Kx36 & 1Mx18 DDRII CIO b2 SRAM 文件：416.56 Kbytes 页数：18 Pages	SAMSUNG 三星	SAMSUNG
K7I161882B-FC16	文件：378.53 Kbytes Page：17 Pages	512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM GENERAL DESCRIPTION The K7I163682B and K7I1161882B are 18,874,368-bits DDR Common I/O Synchronous Pipelined Burst SRAMs. They are organized as 524,288 words by 36bits for K7I163682B and 1,048,576 words by 18 bits for K7I161882B for K7I160882B. FEATURES • 1.8V+0.1V/-0.1V Power Supply. • DLL ci 文件：378.53 Kbytes 页数：17 Pages	SAMSUNG 三星	SAMSUNG
K7I161882B-FC20	文件：378.53 Kbytes Page：17 Pages	512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM GENERAL DESCRIPTION The K7I163682B and K7I1161882B are 18,874,368-bits DDR Common I/O Synchronous Pipelined Burst SRAMs. They are organized as 524,288 words by 36bits for K7I163682B and 1,048,576 words by 18 bits for K7I161882B for K7I160882B. FEATURES • 1.8V+0.1V/-0.1V Power Supply. • DLL ci 文件：378.53 Kbytes 页数：17 Pages	SAMSUNG 三星	SAMSUNG
K7I161882B-FC25	文件：378.53 Kbytes Page：17 Pages	512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM GENERAL DESCRIPTION The K7I163682B and K7I1161882B are 18,874,368-bits DDR Common I/O Synchronous Pipelined Burst SRAMs. They are organized as 524,288 words by 36bits for K7I163682B and 1,048,576 words by 18 bits for K7I161882B for K7I160882B. FEATURES • 1.8V+0.1V/-0.1V Power Supply. • DLL ci 文件：378.53 Kbytes 页数：17 Pages	SAMSUNG 三星	SAMSUNG
K7I161882B-FC30	文件：378.53 Kbytes Page：17 Pages	512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM GENERAL DESCRIPTION The K7I163682B and K7I1161882B are 18,874,368-bits DDR Common I/O Synchronous Pipelined Burst SRAMs. They are organized as 524,288 words by 36bits for K7I163682B and 1,048,576 words by 18 bits for K7I161882B for K7I160882B. FEATURES • 1.8V+0.1V/-0.1V Power Supply. • DLL ci 文件：378.53 Kbytes 页数：17 Pages	SAMSUNG 三星	SAMSUNG
K7I161882B	文件：300 bytes Page：1 Pages	512Kx36 & 1Mx18 DDRII CIO b2 SRAM	Samsung 三星	Samsung
K7I161882B-FC16	文件：300 bytes Page：1 Pages	512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM	Samsung 三星	Samsung

详细参数

型号：
K7I161882B
制造商：
SAMSUNG
制造商全称：
Samsung semiconductor
功能描述：
512Kx36 & 1Mx18 DDRII CIO b2 SRAM

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	K7I161882B-FC16000	SAMSUNG	24+		875		询价
齐创科技(上海,北京,青岛)有限公司	K7I161882B-FC25	SAMSUNG	23+	FBGA	5000	原装正品,假一罚十	询价
深圳市豪迈兴电子有限公司	K7I161882B-FC25	SAMSUM	24+	BGA	5825	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市壹芯创科技有限公司	K7I161882B-FC25	SAMSUNG	22+	BGA	5000	全新原装现货!自家库存!	询价
深圳诚思涵科技有限公司	K7I161882B-E	SAMSUNG	18+	BGA	85600	保证进口原装可开17%增值税发票	询价
深圳市昊创电子有限公司	K7I161882B-EC25	SAMSUNG/三星	1043+	FBGA165	933	全新进口原装	询价
深圳市华睿芯科技有限公司	K7I161882B-EC16		24+	BGA	20000	全新原厂原装，进口正品现货，正规渠道可含税！！	询价
深圳市赛尔通科技有限公司	K7I161882B-FC16	SAMSUNG	23+		65480		询价
深圳市拓亿芯电子有限公司	K7I161882B-EC16	SAMSUNG	25+	BGA	30000	代理原装现货,价格优势	询价
艾睿（深圳）半导体有限公司	K7I161882B-FC16	SAMSUNG/三星	2447	BGA	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价

更多K7I161882B供应商更新时间2026-2-4 15:30:00

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