512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM

GENERAL DESCRIPTION The K7I163682B and K7I1161882B are 18,874,368-bits DDR Common I/O Synchronous Pipelined Burst SRAMs. They are organized as 524,288 words by 36bits for K7I163682B and 1,048,576 words by 18 bits for K7I161882B for K7I160882B. FEATURES • 1.8V+0.1V/-0.1V Power Supply. • DLL ci

文件：378.53 Kbytes 页数：17 Pages

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512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM

GENERAL DESCRIPTION The K7I163682B and K7I1161882B are 18,874,368-bits DDR Common I/O Synchronous Pipelined Burst SRAMs. They are organized as 524,288 words by 36bits for K7I163682B and 1,048,576 words by 18 bits for K7I161882B for K7I160882B. FEATURES • 1.8V+0.1V/-0.1V Power Supply. • DLL ci

文件：378.53 Kbytes 页数：17 Pages

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512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM

GENERAL DESCRIPTION The K7I163682B and K7I1161882B are 18,874,368-bits DDR Common I/O Synchronous Pipelined Burst SRAMs. They are organized as 524,288 words by 36bits for K7I163682B and 1,048,576 words by 18 bits for K7I161882B for K7I160882B. FEATURES • 1.8V+0.1V/-0.1V Power Supply. • DLL ci

文件：378.53 Kbytes 页数：17 Pages

SAMSUNG

三星

512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM

GENERAL DESCRIPTION The K7I163682B and K7I1161882B are 18,874,368-bits DDR Common I/O Synchronous Pipelined Burst SRAMs. They are organized as 524,288 words by 36bits for K7I163682B and 1,048,576 words by 18 bits for K7I161882B for K7I160882B. FEATURES • 1.8V+0.1V/-0.1V Power Supply. • DLL ci

文件：378.53 Kbytes 页数：17 Pages

SAMSUNG

三星

512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM

GENERAL DESCRIPTION The K7I163682B and K7I1161882B are 18,874,368-bits DDR Common I/O Synchronous Pipelined Burst SRAMs. They are organized as 524,288 words by 36bits for K7I163682B and 1,048,576 words by 18 bits for K7I161882B for K7I160882B. FEATURES • 1.8V+0.1V/-0.1V Power Supply. • DLL ci

文件：378.53 Kbytes 页数：17 Pages

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512Kx36 & 1Mx18 DDRII CIO b2 SRAM

文件：416.56 Kbytes 页数：18 Pages

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