K7I163682B-FC25中文资料三星数据手册PDF规格书

GENERAL DESCRIPTION

The K7I163682B and K7I1161882B are 18,874,368-bits DDR Common I/O Synchronous Pipelined Burst SRAMs.

They are organized as 524,288 words by 36bits for K7I163682B and 1,048,576 words by 18 bits for K7I161882B for K7I160882B.

FEATURES

• 1.8V+0.1V/-0.1V Power Supply.

• DLL circuitry for wide output data valid window and future frequency scaling.

• I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O.

• Pipelined, double-data rate operation.

• Common data input/output bus.

• HSTL I/O

• Full data coherency, providing most current data.

• Synchronous pipeline read with self timed late write.

• Registered address, control and data input/output.

• DDR(Double Data Rate) Interface on read and write ports.

• Fixed 2-bit burst for both read and write operation.

• Clock-stop supports to reduce current.

• Two input clocks(K and K) for accurate DDR timing at clock rising edges only.

• Two input clocks for output data(C and C) to minimize clock-skew and flight-time mismatches.

• Two echo clocks (CQ and CQ) to enhance output data traceability.

• Single address bus.

• Byte write (x18, x36) function.

• Simple depth expansion with no data contention.

• Programmable output impedance.

• JTAG 1149.1 compatible test access port.

• 165FBGA(11x15 ball array) with body size of 13mmx15mm. & Lead Free

• Operating in commercial and industrial temperature range.