16M x16 Mobile DDR SDRAM

FEATURES • 1.8V power supply, 1.8V I/O power • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS Latency ( 3 ) - Burst Length ( 2

文件：698.97 Kbytes 页数：48 Pages

SAMSUNG

三星

16M x16 Mobile DDR SDRAM

FEATURES • 1.8V power supply, 1.8V I/O power • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS Latency ( 3 ) - Burst Length ( 2

文件：698.97 Kbytes 页数：48 Pages

SAMSUNG

三星

16M x16 Mobile DDR SDRAM

FEATURES • 1.8V power supply, 1.8V I/O power • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS Latency ( 3 ) - Burst Length ( 2

文件：698.97 Kbytes 页数：48 Pages

SAMSUNG

三星

16M x16 Mobile DDR SDRAM

Samsung

三星