首页 >K4T51163QG-H>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
512Mb G-die DDR2 SDRAM Specification The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banksor16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. KeyFeatures •JEDECstan | SamsungSamsung Group 三星三星半导体 |  | ||
512Mb G-die DDR2 SDRAM Specification The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banksor16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. KeyFeatures •JEDECstan | SamsungSamsung Group 三星三星半导体 | | ||
512Mb G-die DDR2 SDRAM Specification The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banksor16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. KeyFeatures •JEDECstan | SamsungSamsung Group 三星三星半导体 | | ||
512Mb G-die DDR2 SDRAM Specification The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banksor16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. KeyFeatures •JEDECstan | SamsungSamsung Group 三星三星半导体 | | ||
512Mb G-die DDR2 SDRAM Specification The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banksor16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. KeyFeatures •JEDECstan | SamsungSamsung Group 三星三星半导体 | | ||
512MbB-dieDDR2SDRAM DDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddouble data-ratetransferratesofupto533Mb/sec/pin(DDR2-533)for generalapplications. Thechip | SamsungSamsung Group 三星三星半导体 | | ||
512MbB-dieDDR2SDRAM DDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddouble data-ratetransferratesofupto533Mb/sec/pin(DDR2-533)for generalapplications. Thechip | SamsungSamsung Group 三星三星半导体 | | ||
512MbB-dieDDR2SDRAM DDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddouble data-ratetransferratesofupto533Mb/sec/pin(DDR2-533)for generalapplications. Thechip | SamsungSamsung Group 三星三星半导体 | | ||
512MbC-dieDDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi | SamsungSamsung Group 三星三星半导体 | | ||
512MbC-dieDDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi | SamsungSamsung Group 三星三星半导体 | | ||
512MbC-dieDDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi | SamsungSamsung Group 三星三星半导体 | | ||
512MbE-dieDDR2SDRAMSpecification The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomply | SamsungSamsung Group 三星三星半导体 | | ||
ConsumerMemory SDRAMProductGuide MemoryDivision November2007 | SamsungSamsung Group 三星三星半导体 | | ||
512MbG-dieDDR2SDRAMSpecification The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banksor16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. KeyFeatures •JEDECstan | SamsungSamsung Group 三星三星半导体 | | ||
ConsumerMemory SDRAMProductGuide MemoryDivision November2007 | SamsungSamsung Group 三星三星半导体 | | ||
PRODUCTSELECTIONGUIDEDisplays,MemoryandStorage Samsungcontinuestoleadtheindustrywiththebroadestportfolioofmemoryproductsand displaytechnology.Itsdisplaypanels,DRAM,flash,mobileandgraphicsmemoryarefoundinmany computers–fromultrabookstopowerfulservers–andinawiderangeofhandhelddevicessuch assmartphon | SamsungSamsung Group 三星三星半导体 | |
详细参数
- 型号：
K4T51163QG-H
- 制造商：
SAMSUNG
- 制造商全称：
Samsung semiconductor
- 功能描述：
512Mb G-die DDR2 SDRAM Specification
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
23+ |
N/A |
38460 |
正品授权货源可靠 |
询价 | |||
SAMSUNG |
23+ |
BGA |
30000 |
代理原装现货,价格优势 |
询价 | ||
SAMSUNG/三星 |
21+ |
FBGA84 |
6688 |
十年老店,原装正品 |
询价 | ||
SAMSUNG |
22+ |
FBGA84 |
32350 |
原装正品 假一罚十 公司现货 |
询价 | ||
SAMSUNG/三星 |
23+ |
BGA |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
SAMSUNG |
21+ |
FBGA84 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
SAMSUNG/三星 |
21+ |
BGA |
10000 |
原装现货假一罚十 |
询价 | ||
SAMSUNG |
19+ 20+ |
FBGA84 |
32350 |
深圳存库原装现货 |
询价 | ||
SAMSUNG/三星 |
21+ |
BGA |
11600 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
SAMSUNG/三星 |
23+ |
BGA |
9980 |
原装正品，支持实单 |
询价 |
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