32M x16 Mobile-DDR SDRAM

FEATURES • 1.8V power supply, 1.8V I/O power • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • 1 /CS • 1 CKE • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS Latency ( 2, 3 )

文件：217.36 Kbytes 页数：23 Pages

Samsung

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32M x16 Mobile-DDR SDRAM

Samsung

三星

32M x16 Mobile-DDR SDRAM

FEATURES • 1.8V power supply, 1.8V I/O power • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • 1 /CS • 1 CKE • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS Latency ( 2, 3 )

文件：217.36 Kbytes 页数：23 Pages

Samsung

三星

32M x16 Mobile-DDR SDRAM

FEATURES • 1.8V power supply, 1.8V I/O power • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • 1 /CS • 1 CKE • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS Latency ( 2, 3 )

文件：217.36 Kbytes 页数：23 Pages

Samsung

三星

32M x16 Mobile-DDR SDRAM

FEATURES • 1.8V power supply, 1.8V I/O power • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • 1 /CS • 1 CKE • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS Latency ( 2, 3 )

文件：217.36 Kbytes 页数：23 Pages

Samsung

三星