1Gb Q-die DDR2 SDRAM Specification

The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. Key Features • JEDEC standard

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1Gb Q-die DDR2 SDRAM Specification

The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. Key Features • JEDEC standard

文件：886.4 Kbytes 页数：44 Pages

Samsung

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1Gb Q-die DDR2 SDRAM Specification

The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. Key Features • JEDEC standard

文件：886.4 Kbytes 页数：44 Pages

Samsung

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1Gb Q-die DDR2 SDRAM Specification

The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. Key Features • JEDEC standard

文件：886.4 Kbytes 页数：44 Pages

Samsung

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1Gb Q-die DDR2 SDRAM Specification

The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. Key Features • JEDEC standard

文件：886.4 Kbytes 页数：44 Pages

Samsung

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1Gb Q-die DDR2 SDRAM Specification

The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. Key Features • JEDEC standard

文件：886.4 Kbytes 页数：44 Pages

Samsung

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1Gb C-die DDR2 SDRAM Specification

1Gb C-die DDR2 SDRAM Specification 60FBGA & 84FBGA with Pb-Free The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed

文件：485.58 Kbytes 页数：26 Pages

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1Gb D-die DDR2 SDRAM Specification

The 1Gb DDR2 SDRAM is organized as a 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 S

文件：587.02 Kbytes 页数：27 Pages

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Consumer Memory

SDRAM Product Guide Memory Division November 2007

文件：542.54 Kbytes 页数：15 Pages

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1Gb E-die DDR2 SDRAM

The 1Gb DDR2 SDRAM is organized asa 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. Key Features • JEDEC standard VDD= 1

文件：1.0829 Mbytes 页数：46 Pages

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