K4T1G044QQ-HCE6中文资料三星数据手册PDF规格书

The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications.

Key Features

• JEDEC standard 1.8V ± 0.1V Power Supply

• VDDQ = 1.8V ± 0.1V

• 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin

• 8 Banks

• Posted CAS

• Programmable CAS Latency: 3, 4, 5, 6

• Programmable Additive Latency: 0, 1, 2, 3, 4, 5

• Write Latency(WL) = Read Latency(RL) -1

• Burst Length: 4 , 8(Interleave/nibble sequential)

• Programmable Sequential / Interleave Burst Mode

• Bi-directional Differential Data-Strobe (Single-ended data strobe is an optional feature)

• Off-Chip Driver(OCD) Impedance Adjustment

• On Die Termination

• Special Function Support

- PASR(Partial Array Self Refresh)

- 50ohm ODT

- High Temperature Self-Refresh rate enable

• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C

• All of Lead-free products are compliant for RoHS