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K4T1G044QE-HCLE6中文资料PDF规格书
K4T1G044QE-HCLE6规格书详情
The 1Gb DDR2 SDRAM is organized asa 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications.
Key Features
• JEDEC standard VDD= 1.8V ± 0.1V Power Supply
•VDDQ= 1.8V ± 0.1V
• 333MHz fCKfor 667Mb/sec/pin, 400MHz fCKfor 800Mb/sec/pin
• 8 Banks
• Posted CAS
• Programmable CASLatency: 3, 4, 5, 6
• Programmable Additive Latenc y: 0, 1, 2, 3, 4, 5
• Write Latency(WL) = Read Latency(RL) -1
• Burst Length: 4 , 8(Interleave/nibble sequential)
• Programmable Sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
• Off-Chip Driver(OCD) Impedance Adjustment
• On Die Termination
• Special Function Support
- 50ohm ODT
- High Temperature Self-Refresh rate enable
• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE <95 °C
• All of products are Lead-Free, Halogen-Free, and RoHS compliant
产品属性
- 型号:
K4T1G044QE-HCLE6
- 制造商:
SAMSUNG
- 制造商全称:
Samsung semiconductor
- 功能描述:
1Gb E-die DDR2 SDRAM
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SAMSUNG |
21+ |
BGA |
12588 |
原装正品,自己库存 假一罚十 |
询价 | ||
SAMSUNG |
2020+ |
BGA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
- |
NA |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
SAMSUNG/三星 |
FBGA |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
SAMSUNG/三星 |
23+ |
FBGA |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
SAMSUNG |
1923+ |
FBGA |
9865 |
原装进口现货库存专业工厂研究所配单供货 |
询价 | ||
SAMSUNG/三星 |
22+ |
BGA |
9000 |
原装正品 |
询价 | ||
SAMSUNG |
BGA |
6000 |
原装现货,长期供应,终端可账期 |
询价 | |||
SAMSUNG |
22+ |
FBGA |
360000 |
进口原装房间现货实库实数 |
询价 | ||
SAMSUNG |
23+ |
BGA |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 |