Power MOSFET

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VBSEMI

微碧半导体

Power MOSFET

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VBSEMI

微碧半导体

N-Channel MOSFET uses advanced trench technology

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DOINGTER

杜因特

Power MOSFET

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VBSEMI

微碧半导体

MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 1.4 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 2.5 S (typ.) (3) Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) (4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1

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TOSHIBA

东芝