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K4H511638D-TLA0

128Mb DDR SDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung semiconductor

三星三星半导体

K4H511638D-TLA2

128Mb DDR SDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung semiconductor

三星三星半导体

K4H511638D-TLB0

128Mb DDR SDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung semiconductor

三星三星半导体

K4H511638D-UC/LA2

512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung semiconductor

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K4H511638D-UC/LA2

512Mb D-die DDR SDRAM Specification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung semiconductor

三星三星半导体

K4H511638D-UC/LB0

512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung semiconductor

三星三星半导体

K4H511638D-UC/LB0

512Mb D-die DDR SDRAM Specification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung semiconductor

三星三星半导体

K4H511638D-UC/LB3

512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung semiconductor

三星三星半导体

K4H511638D-UC/LB3

512Mb D-die DDR SDRAM Specification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung semiconductor

三星三星半导体

K4H511638D-UC/LCC

512Mb D-die DDR SDRAM Specification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung semiconductor

三星三星半导体

详细参数

  • 型号:

    K4H511638D

  • 制造商:

    SAMSUNG

  • 制造商全称:

    Samsung semiconductor

  • 功能描述:

    DDR SDRAM Product Guide

供应商型号品牌批号封装库存备注价格
SAMSUNG
TSOP
140
正品原装--自家现货-实单可谈
询价
SAMSUNG
23+
TSOP
18689
询价
SAMSUNG
08PB
BGA
3600
全新原装进口自己库存优势
询价
SAMSUNG
2020+
TSSOP
508
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
SAMSUNG
17+
TSOP
6200
100%原装正品现货
询价
SAMSUNG
24+
TSOP
4650
询价
SAMSUNG
24+
TSOP
162
询价
SAMSUNG
24+
TSOP
200
原装现货假一罚十
询价
SAMSUSNG
23+
TSOP
5000
原装正品,假一罚十
询价
SANSUNG
16+
TSOP
159
全新原装现货
询价
更多K4H511638D供应商 更新时间2025-7-27 10:21:00