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K4H511638D-UCC

512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant)

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung semiconductor

三星三星半导体

K4H511638D-UCSLASHLCC

512MbD-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung semiconductor

三星三星半导体

K4H511638D-UCSLASHLCC

512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant)

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung semiconductor

三星三星半导体

K4H511638F

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung semiconductor

三星三星半导体

K4H511638F

512MbF-dieDDRSDRAMSpecification

ConsumerMemory

SamsungSamsung semiconductor

三星三星半导体

K4H511638F-LC/LCC

512MbF-dieDDRSDRAMSpecification

ConsumerMemory

SamsungSamsung semiconductor

三星三星半导体

K4H511638F-LCSLASHLCC

512MbF-dieDDRSDRAMSpecification

ConsumerMemory

SamsungSamsung semiconductor

三星三星半导体

K4H511638G

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung semiconductor

三星三星半导体

K4H511638G

512MbG-dieDDRSDRAMSpecification

GeneralDescription TheK4H510438G/K4H510838G/K4H511638Gis536,870,912bitsofdoubledataratesynchronousDRAMorganizedas4x33,554,432/4x16,777,216/4x8,388,608wordsby4/8/16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeal

SamsungSamsung semiconductor

三星三星半导体

K4H511638G-LC/LCC

512MbG-dieDDRSDRAMSpecification

GeneralDescription TheK4H510438G/K4H510838G/K4H511638Gis536,870,912bitsofdoubledataratesynchronousDRAMorganizedas4x33,554,432/4x16,777,216/4x8,388,608wordsby4/8/16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeal

SamsungSamsung semiconductor

三星三星半导体

详细参数

  • 型号:

    K4H511638C-ULCC

  • 制造商:

    SAMSUNG

  • 制造商全称:

    Samsung semiconductor

  • 功能描述:

    512Mb C-die DDR SDRAM Specification

供应商型号品牌批号封装库存备注价格
SAMSANG
19+
TSSOP
256800
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
SAMSUNG/三星
1948+
TSSOP
6852
只做原装正品现货!或订货假一赔十!
询价
BGA
23+
16
3500
询价
SAMSUNG/三星
23+
TSOP
50000
全新原装正品现货,支持订货
询价
SAMSUNG/三星
21+
TSSOP
10000
原装现货假一罚十
询价
BGA
22+
专营SAMSUNG
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
询价
SAMSUNG
23+
TSSOP
8560
受权代理!全新原装现货特价热卖!
询价
SAMSUNG/三星
24+
NA/
4698
优势代理渠道,原装正品,可全系列订货开增值税票
询价
SAMSUNG
23+
TSSOP
8000
只做原装现货
询价
SAMSUNG
23+
TSSOP
7000
询价
更多K4H511638C-ULCC供应商 更新时间2025-5-22 16:12:00