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K4H511638D-LCC

512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant)

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung semiconductor

三星三星半导体

K4H511638D-UC/LCC

512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant)

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung semiconductor

三星三星半导体

K4H511638D-UC/LCC

512MbD-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung semiconductor

三星三星半导体

K4H511638D-UCC

512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant)

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung semiconductor

三星三星半导体

K4H511638D-UCSLASHLCC

512MbD-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung semiconductor

三星三星半导体

K4H511638D-UCSLASHLCC

512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant)

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung semiconductor

三星三星半导体

K4H511638F

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung semiconductor

三星三星半导体

K4H511638F

512MbF-dieDDRSDRAMSpecification

ConsumerMemory

SamsungSamsung semiconductor

三星三星半导体

K4H511638F-LC/LCC

512MbF-dieDDRSDRAMSpecification

ConsumerMemory

SamsungSamsung semiconductor

三星三星半导体

K4H511638F-LCSLASHLCC

512MbF-dieDDRSDRAMSpecification

ConsumerMemory

SamsungSamsung semiconductor

三星三星半导体

详细参数

  • 型号:

    K4H511638C-UCB

  • 制造商:

    SAMSUNG

  • 制造商全称:

    Samsung semiconductor

  • 功能描述:

    512Mb C-die DDR SDRAM Specification

供应商型号品牌批号封装库存备注价格
SAMSUNG
2016+
TSOP
5000
全新原装现货,只售原装,假一赔十!
询价
SAMSUNG
20+
TSOP
2860
原厂原装正品价格优惠公司现货欢迎查询
询价
SAMSUNG
2021+
TSOP
6800
原厂原装,欢迎咨询
询价
SAMSUNG/三星
24+
TSSOP66
11250
全新原装现货
询价
SAMSUNG
24+
TSSOP-66
4650
询价
24+
TSSOP
265
询价
SAMSUNG
05+
TSOP66
3960
全新原装进口自己库存优势
询价
SAMSUNG
12+
TSOP54
100000
全新原装,公司大量现货,绝对正品供应
询价
SAMSUNG
16+
EON
4000
进口原装现货/价格优势!
询价
SAMSUNG
24+
TSOP
6980
原装现货,可开13%税票
询价
更多K4H511638C-UCB供应商 更新时间2025-7-14 10:28:00