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K4H510838B-GC/LCC

512MbB-dieDDRSDRAMSpecification

SamsungSamsung Group

三星三星半导体

K4H510838B-N

512MbB-dieDDRSDRAMSpecification54sTSOP-II(400milx441mil)

SamsungSamsung Group

三星三星半导体

K4H510838B-NC/LCC

512MbB-dieDDRSDRAMSpecification54sTSOP-II(400milx441mil)

SamsungSamsung Group

三星三星半导体

K4H510838B-TC/LCC

512MbB-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl

SamsungSamsung Group

三星三星半导体

K4H510838B-UC/LCC

512MbB-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl

SamsungSamsung Group

三星三星半导体

K4H510838B-VC/LCC

512MbB-dieDDRSDRAMSpecification54sTSOP-II(400milx441mil)

SamsungSamsung Group

三星三星半导体

K4H510838B-ZC/LCC

512MbB-dieDDRSDRAMSpecification

SamsungSamsung Group

三星三星半导体

K4H510838C-UC

512MbC-dieDDRSDRAMSpecification

SamsungSamsung Group

三星三星半导体

K4H510838C-UCCC

512MbC-dieDDRSDRAMSpecification

SamsungSamsung Group

三星三星半导体

K4H510838C-ULCC

512MbC-dieDDRSDRAMSpecification

SamsungSamsung Group

三星三星半导体

K4H510838C-ZCCC

512MbC-dieDDRSDRAMSpecification

SamsungSamsung Group

三星三星半导体

K4H510838C-ZLCC

512MbC-dieDDRSDRAMSpecification

SamsungSamsung Group

三星三星半导体

K4H510838D

512MbD-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung Group

三星三星半导体

K4H510838D

DDRSDRAMProductGuide

ConsumerMemory

SamsungSamsung Group

三星三星半导体

K4H510838D-LCC

512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant)

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung Group

三星三星半导体

K4H510838D-UC/LCC

512MbD-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung Group

三星三星半导体

K4H510838D-UC/LCC

512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant)

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung Group

三星三星半导体

K4H510838D-UCC

512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant)

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung Group

三星三星半导体

K4H510838F

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung Group

三星三星半导体

K4H510838F

512MbF-dieDDRSDRAMSpecification

ConsumerMemory

SamsungSamsung Group

三星三星半导体

供应商型号品牌批号封装库存备注价格
SAMSUNG
2023+
TSOP
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
SAMSUNG
21+
35200
一级代理/放心采购
询价
SAMSUNG
22+
TSOP
360000
进口原装房间现货实库实数
询价
SAMSUNG/三星
TSOP
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
SAMSUNG
05+
TSOP66
2760
全新原装进口自己库存优势
询价
SAMSUNG
17+
TSOP66
9988
只做原装进口,自己库存
询价
SAMSUNG
23+
TSOP66
8650
受权代理!全新原装现货特价热卖!
询价
SAMSUNG
23+
TSOP66
20000
全新原装假一赔十
询价
SAMSUNG
2022+
TSOP
20000
只做原装进口现货.假一罚十
询价
SAMSUNG
1923+
BGA
10000
只做原装特价
询价
更多K4H510838F-TCCC供应商 更新时间2024-5-4 13:30:00