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K4H510838B-GC/LCC

512MbB-dieDDRSDRAMSpecification

SamsungSamsung Group

三星三星半导体

K4H510838B-N

512MbB-dieDDRSDRAMSpecification54sTSOP-II(400milx441mil)

SamsungSamsung Group

三星三星半导体

K4H510838B-NC/LCC

512MbB-dieDDRSDRAMSpecification54sTSOP-II(400milx441mil)

SamsungSamsung Group

三星三星半导体

K4H510838B-TC/LCC

512MbB-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl

SamsungSamsung Group

三星三星半导体

K4H510838B-UC/LCC

512MbB-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl

SamsungSamsung Group

三星三星半导体

K4H510838B-VC/LCC

512MbB-dieDDRSDRAMSpecification54sTSOP-II(400milx441mil)

SamsungSamsung Group

三星三星半导体

K4H510838B-ZC/LCC

512MbB-dieDDRSDRAMSpecification

SamsungSamsung Group

三星三星半导体

K4H510838C-UC

512MbC-dieDDRSDRAMSpecification

SamsungSamsung Group

三星三星半导体

K4H510838C-UCCC

512MbC-dieDDRSDRAMSpecification

SamsungSamsung Group

三星三星半导体

K4H510838C-ULCC

512MbC-dieDDRSDRAMSpecification

SamsungSamsung Group

三星三星半导体

K4H510838C-ZCCC

512MbC-dieDDRSDRAMSpecification

SamsungSamsung Group

三星三星半导体

K4H510838C-ZLCC

512MbC-dieDDRSDRAMSpecification

SamsungSamsung Group

三星三星半导体

K4H510838D

512MbD-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung Group

三星三星半导体

K4H510838D

DDRSDRAMProductGuide

ConsumerMemory

SamsungSamsung Group

三星三星半导体

K4H510838D-LCC

512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant)

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung Group

三星三星半导体

K4H510838D-UC/LCC

512MbD-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung Group

三星三星半导体

K4H510838D-UC/LCC

512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant)

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung Group

三星三星半导体

K4H510838D-UCC

512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant)

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung Group

三星三星半导体

K4H510838F

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung Group

三星三星半导体

K4H510838F

512MbF-dieDDRSDRAMSpecification

ConsumerMemory

SamsungSamsung Group

三星三星半导体

供应商型号品牌批号封装库存备注价格
SAMSUNG/三星
2022+
TSOP66
100
原厂授权代理 价格绝对优势
询价
SAM
2017+
SOP
22556
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增
询价
SAMSUNG
2016+
TSOP
960
只做原装,假一罚十,公司优势内存型号!
询价
SAMSUNG
23+
TSOP
5000
原装正品,假一罚十
询价
SAMSUNG
2022
TSOP
5280
原厂原装正品,价格超越代理
询价
SAMSUNG
23+
TSOP
8890
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
SAMSANG
19+
TSOP
256800
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
SAMSUNG
2018+
SOP
30617
三星闪存专营品牌店全新原装热卖
询价
SAM
1844+
SOP
6528
只做原装正品假一赔十为客户做到零风险!!
询价
SAMSUNG
17+
TSOP
5188
询价
更多K4H510838F-LCCC供应商 更新时间2024-5-14 15:07:00