首页>K4H510438E-TCB0>规格书详情
K4H510438E-TCB0中文资料三星数据手册PDF规格书
相关芯片规格书
更多K4H510438E-TCB0规格书详情
特性 Features
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Four banks operation
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• MRS cycle with address key programs
-. Read latency 2, 2.5 (clock)
-. Burst length (2, 4, 8)
-. Burst type (sequential & interleave)
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
• Data I/O transactions on both edges of data strobe
• Edge aligned data output, center aligned data input
• LDM,UDM/DM for write masking only
• Auto & Self refresh
• 15.6us refresh interval(4K/64ms refresh)
• Maximum burst refresh cycle : 8
• 66pin TSOP II package
产品属性
- 型号:
K4H510438E-TCB0
- 制造商:
SAMSUNG
- 制造商全称:
Samsung semiconductor
- 功能描述:
128Mb DDR SDRAM
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
24+ |
NA/ |
17 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
SAMSUNG |
24+ |
SSOP |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
询价 | ||
SAMSUNG/三星 |
20+ |
TSOP |
35830 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
SAMSUNG/三星 |
25+ |
BGA |
996880 |
只做原装,欢迎来电资询 |
询价 | ||
SAMSUNG/三星 |
24+ |
NA |
990000 |
明嘉莱只做原装正品现货 |
询价 | ||
SAM |
23+ |
NA |
128 |
专做原装正品,假一罚百! |
询价 | ||
Samsung |
ROHS |
56520 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
SAMSUNG/三星 |
23+ |
BGAPB |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
Samsung |
25+ |
TSOP66 |
10000 |
原厂原装,价格优势 |
询价 | ||
SAMSUNG/三星 |
23+ |
BGA |
98900 |
原厂原装正品现货!! |
询价 |


