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K4H510438B-UC/LB0中文资料PDF规格书
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Key Features
• VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333
• VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16)
• Four banks operation
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• MRS cycle with address key programs
-. Read latency : DDR266(2, 2.5 Clock), DDR333(2.5 Clock), DDR400(3 Clock)
-. Burst length (2, 4, 8)
-. Burst type (sequential & interleave)
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
• Data I/O transactions on both edges of data strobe
• Edge aligned data output, center aligned data input
• LDM,UDM for write masking only (x16)
• DM for write masking only (x4, x8)
• Auto & Self refresh
• 7.8us refresh interval(8K/64ms refresh)
• Maximum burst refresh cycle : 8
• 66pin TSOP II Pb-Free package
• RoHS compliant
产品属性
- 型号:
K4H510438B-UC/LB0
- 制造商:
SAMSUNG
- 制造商全称:
Samsung semiconductor
- 功能描述:
512Mb B-die DDR SDRAM Specification
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
23+ |
NA/ |
122 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
SANSUNG |
21+ |
66TSOP |
35200 |
一级代理/放心采购 |
询价 | ||
SAMSUNG |
23+ |
TSOP |
20000 |
原厂原装正品现货 |
询价 | ||
SAM |
23+ |
NA |
300 |
专做原装正品,假一罚百! |
询价 | ||
SAMSUNG |
2023+ |
TSOP |
5378 |
全新原厂原装产品、公司现货销售 |
询价 | ||
SAMSANG |
19+ |
TSSOP |
256800 |
原厂代理渠道,每一颗芯片都可追溯原厂; |
询价 | ||
SAMSUNG/三星 |
23+ |
TSSOP |
20000 |
原装正品 欢迎咨询 |
询价 | ||
SAMSUNG |
23+ |
TSSOP |
8000 |
只做原装现货 |
询价 | ||
SAMSUNG/三星 |
23+ |
TSSOP |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
SAMSUNG |
22+ |
TSOP |
360000 |
进口原装房间现货实库实数 |
询价 |