首页>K4H510438B-TCB0>规格书详情
K4H510438B-TCB0中文资料三星数据手册PDF规格书
相关芯片规格书
更多- K4H510438A-TCB0
- K4H510438B-TCA0
- K4H510438A-TLA2
- K4H510438A-TLA0
- K4H510438B-TCA2
- K4H510438A-TLB0
- K4H510438A-TCA0
- K4H510438B-TC/LA2
- K4H510438
- K4H510438B-TC/LB3
- K4H510438B-TC/LB0
- K4H510438B-GC/LB3
- K4H510438B-GC/LB0
- K4H510438B-GC/LCC
- K4H510438B-GC/LA2
- K4H2G0638A-UC/LCC
- K4H510438A-TCA2
- K4H510438B-GCSLASHLA2
K4H510438B-TCB0规格书详情
Features
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Four banks operation
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• MRS cycle with address key programs
-. Read latency 2, 2.5 (clock)
-. Burst length (2, 4, 8)
-. Burst type (sequential & interleave)
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
• Data I/O transactions on both edges of data strobe
• Edge aligned data output, center aligned data input
• LDM,UDM/DM for write masking only
• Auto & Self refresh
• 15.6us refresh interval(4K/64ms refresh)
• Maximum burst refresh cycle : 8
• 66pin TSOP II package
产品属性
- 型号:
K4H510438B-TCB0
- 制造商:
SAMSUNG
- 制造商全称:
Samsung semiconductor
- 功能描述:
128Mb DDR SDRAM
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
专营SAMSUNG |
22+ |
XILINX/赛灵思 |
30000 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
询价 | ||
SAMSUNG |
2023+ |
SMD |
2261 |
安罗世纪电子只做原装正品货 |
询价 | ||
SAMSUNG |
24+ |
TSOP |
6980 |
原装现货,可开13%税票 |
询价 | ||
SAMSUNG/三星 |
21+ |
TSSOP |
10000 |
原装现货假一罚十 |
询价 | ||
SAMSUNG/三星 |
24+ |
TSSOP |
22055 |
郑重承诺只做原装进口现货 |
询价 | ||
SAMSUNG |
17+ |
TSOP |
5188 |
询价 | |||
SAMSUNG/三星 |
24+ |
NA/ |
122 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
SAMSUNG |
24+ |
TSOP |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
SAMSUNG |
24+ |
TSOP |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
询价 | ||
1023+ |
TSOP |
8 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 |