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K4D26323RA

1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL

GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D26323RAis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhi

SamsungSamsung Group

三星三星半导体

K4D26323RA-GC

1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL

GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D26323RAis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhi

SamsungSamsung Group

三星三星半导体

K4D26323RA-GC2A

1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL

GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D26323RAis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhi

SamsungSamsung Group

三星三星半导体

K4D26323RA-GC33

1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL

GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D26323RAis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhi

SamsungSamsung Group

三星三星半导体

K4D26323RA-GC36

1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL

GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D26323RAis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhi

SamsungSamsung Group

三星三星半导体

K4D26323QG

128MbitGDDRSDRAM

1Mx32Bitx4BanksGraphicDoubleDataRateSynchronousDRAMwithBi-directionalDataStrobeandDLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D26323QGis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricat

SamsungSamsung Group

三星三星半导体

详细参数

  • 型号:

    K4D26323RA

  • 制造商:

    SAMSUNG

  • 制造商全称:

    Samsung semiconductor

  • 功能描述:

    1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL

供应商型号品牌批号封装库存备注价格
BGA
52
询价
-
3880
询价
SAMSUNG
2017+
BGA
35689
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
SAMSUNG
22+
BGA
2560
绝对原装!现货热卖!
询价
SAMSUNG
23+
原厂封装
6327
询价
SAMSUNG
23+
BGA
5500
原装无铅,优势热卖
询价
SAMSUNG
03+
BGA
4
询价
SAMSUNG
0310+
BGA144
4970
现货-ROHO
询价
SAMSUNG
BGA
0310+
215
全新原装进口自己库存优势
询价
SAMSUNG
23+
BGA
5000
原装正品,假一罚十
询价
更多K4D26323RA供应商 更新时间2024-5-1 13:00:00